Pulsed laser deposition of indium antimonide
Identifieur interne : 000026 ( Main/Exploration ); précédent : 000025; suivant : 000027Pulsed laser deposition of indium antimonide
Auteurs : RBID : ISTEX:12034_1996_Article_BF02744794.pdfEnglish descriptors
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Abstract
Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.
DOI: 10.1007/BF02744794
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The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="dde8b03636a22a1aa5c0fe57a1f37c9889662491"><titleInfo lang="eng"><title>Pulsed laser deposition of indium antimonide</title></titleInfo><name type="personal"><namePart type="given">R</namePart><namePart type="family">Venkataraghavan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">K M</namePart><namePart type="family">Satyalakshmi</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation><affiliation>Solid State and Structural Chemistry Unit, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">K S R K</namePart><namePart type="family">Rao</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">A K</namePart><namePart type="family">Sreedhar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">M S</namePart><namePart type="family">Hegde</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation><affiliation>Solid State and Structural Chemistry Unit, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><name type="personal"><namePart type="given">H L</namePart><namePart type="family">Bhat</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics, Indian Institute of Science, 560 012, Bangalore, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Proceedings Of The Workshop On ‘Hydrogen In Materials’, New Delhi, 1994</genre><genre>Original Paper</genre><originInfo><publisher>Springer India, New Delhi</publisher><dateValid encoding="w3cdtf">2007-11-08</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.</abstract><subject lang="eng"><genre>Keywords</genre><topic>PLD</topic><topic>indium antimonide</topic><topic>morphology</topic><topic>interface</topic><topic>In2Te3</topic><topic>InTe</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Bull. Mater. Sci.</title></titleInfo><titleInfo><title>Bulletin of Materials Science</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 19</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-02-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Materials Science</topic><topic>Engineering, general</topic></subject><identifier type="issn">0250-4707</identifier><identifier type="issn">Electronic: 0973-7669</identifier><identifier type="matrixNumber">12034</identifier><identifier type="local">IssueArticleCount: 20</identifier><recordInfo><recordOrigin>The Indian Academy of Sciences, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02744794</identifier><identifier type="matrixNumber">Art14</identifier><identifier type="local">BF02744794</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>123</start><end>129</end></extent></part><recordInfo><recordOrigin>The Indian Academy of Sciences, 1996</recordOrigin><recordIdentifier>12034_1996_Article_BF02744794.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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